Search results for "Noise-figure meter"
showing 6 items of 6 documents
Full characterization of low-noise HEMTs using only noise figure measurements
1993
A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. Selection of the optimum measuring conditions, all the steps of the experimental procedure, the data collecting and processing to derive all the parameters, are fully driven by an original (unpublished) software, even without the presence of an (unskilled) operator. Results are presented about the complete characterization of a series of ten pseudomorphicHEMTs in the 8-16 GHz range. The S-parameters are also compared with those measured by an ANA.
Advanced PSA Bipolar Transistors for Wireless Applications: Measurements of Scattering Parameters and Noise Figure
1994
A complete investigation on the performance of a series of double polysilicon self-aligned (PSA) bipolar transistors in terms of scattering parameters and noise figure is here reported. The devices have been characterized over the 1-4 GHz frequency range in several bias conditions to the aim of assessing the optimum bias values for the best trade-off between noise and gain performance. This is the first part of an extensive investigation currently performed on 5 families of PSA devices having different emitter configuration and size which have been manufactured by SGS-Thomson to undergo a comparative analysis on the global transistor performance.
A Method for Accurate Measurements of Optimum Noise Parameters of Microwave Transistors
1985
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
Comparison between two measuring methods for complete characterization of low-noise HEMTs at microwaves
1996
The good performances of a set-up for the complete characterization of HEMTs up to 40 Ghz in terms of noise and scattering parameters through noise figure measurements only are shown by many experimental results. Because of some inconveniences in practice the use of the method is suggested for research laboratories only. For industrial applications an alternative symplified method is proposed whose performances are shown to be in surprising agreement with the ones of the standard method.
ACCURATE MEASUREMENTS OF OPTIMUM NOISE PARAMETERS OF MICROWAVE TRANSISTORS
1986
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
Up to Date Version of a Computer-Driven Noise Figure Measuring System for the Simultaneous Determination of Noise, Gain and Scattering Parameters of …
1995
The complete characterization of microwave transistors in terms of (four) noise, (four) gain and scattering parameters sets ({N), {G) and [SI, respectively) vs. frequency and bias conditions (and also vs. decreasing temperature, if required) is the first and most important step to design low noise amplifiers (LNAs). The characterization of the device under test (DUT) in terms of [SI is friendly by means of commercial Automatic Network Analyzer; then the { G) set may be determined by computation.